Beyond Silicon Limitations, CoolGaN™ Drives High-Efficiency Power Design Innovation
Beyond the Limits of Silicon, CoolGaN™ Drives Innovation in High-Efficiency Power Design Article Input 2025.05.29 14:42 e4ds Reporter Myung-Hwan Myeong (daniel@e4ds.com) Beyond the Limits of Silicon, Infineon CoolGaN™ Drives Innovation in Power Design Executive Director Yong-Gyu Cho “GaN is no longer an option but a necessity in actual design sites” “The physical limitations of silicon-based power devices have long been predicted. In sites where high-efficiency and high-power density designs are required, it is no longer possible to achieve the expected performance with silicon. That is why the industry is naturally turning to gallium nitride (GaN).” Yong-Gyu Cho, Executive Director of Dabo Corporation’s Technology Division, said this about gallium nitride (GaN) technology, pointing out the potential and limitations of GaN as a next-generation power device technology that will overcome the limitations of silicon. In fact, over the past 10 years, silicon [...]
