Infineon introduces 25V to 150V OptiMOS™ source-down power MOSFETs in a PQFN double-sided cooled package
Infineon launches 25V to 150V OptiMOS™ source-down power MOSFETs in PQFN double-sided cooling package 2023-01-18 11:57 Infineon OptiMOS source-down DSC_WHSON Neubiberg, Germany–(Newswire) January 2023, 01 — Infineon Technologies (Korea CEO Seungsoo Lee) announced the launch of new OptiMOS™ source-down power MOSFETs from 18V to 3.3V available in a 3.3mm x 25mm PQFN package. The new family of bottom-cooled and double-sided cooled configurations provides an attractive solution for high-performance DC-DC power conversion, enabling system innovation in applications such as servers, telecom, OR-ing, battery protection, power tools, and chargers. . These products combine Infineon’s latest MOSFET technology and advanced packaging to improve system performance [...]