Infineon introduces 25V to 150V OptiMOS™ source-down power MOSFETs in a PQFN double-sided cooled package

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Infineon introduces 25V to 150V OptiMOS™ source-down power MOSFETs in a PQFN double-sided cooled package

Category: New Products Post Date: 2023-01-18

Infineon introduces 25V to 150V OptiMOS™ source-down power MOSFETs in a PQFN double-sided cooled package

2023-01-18 11:57

 

Neubiberg, Germany–(news wire) January 2023, 01 — Infineon Technologies (Korea CEO Seungsoo Lee) announced the launch of its new OptiMOS™ source-down power MOSFET from 18V to 3.3V available in a 3.3mm x 25mm PQFN package.

The new family of bottom-cooled and double-sided cooled configurations offers an attractive solution for high-performance DC-DC power conversion, enabling system innovation in applications such as servers, telecom, OR-ing, battery protection, power tools, and chargers. .

These products combine Infineon's latest MOSFET technology with advanced packaging to take system performance to the next level. Applying the source-down concept, the MOSFET die source terminals are flipped over to face the package footprint and soldered to the PCB. Additionally, it improves the clip design for the drain terminal and boasts a market-leading chip-to-package area ratio.

As system form factors continue to shrink, lowering power dissipation and optimizing thermal management become important. Compared to PQFN 3.3mm x 3.3mm drain-down devices, these new products improve on-resistance (RDS(on)) by up to 25%. Infineon's OptiMOS source-down PQFN double-sided cooling products provide an improved thermal interface to transfer power losses from the switch to the heat sink. Double-sided cooling products connect the power switch to the heat sink through the most direct route, increasing power consumption by up to 3 times compared to bottom-cooled source-down products.

Additionally, two footprint versions are available, providing greater flexibility for PCB routing. Standard gate products allow for quick and easy modifications to existing drain-down designs. Center gate products connect devices in parallel to keep driver-to-gate connections as short as possible. Maximum system performance can be achieved with the OptiMOS source-down PQFN 298mm x 3.3mm 3.3V to 25V offering high continuous current up to 150A.

◇ Supply

The OptiMOS source-down PQFN 3.3mm x 3.3mm 25V to 150V products are available in two footprint versions: standard gate and center gate. Two footprints are currently available for ordering in a double-sided cooling package. Additional information can be found on the website.

About Infineon

Infineon Technologies is a global semiconductor leader in power systems and IoT. Infineon's products and solutions lead the way in decarbonization and digitalization. As of fiscal 2022 (ending September 9), it achieved sales of 30 billion euros with approximately 5 employees worldwide. Infineon is registered on the Frankfurt Stock Exchange (trading symbol: IFX) and the U.S. over-the-counter market OTCQX International Premier (trading symbol: IFNY).

Server information: https://bit.ly/3H4GfQF
Telecom Information: https://bit.ly/3Jak2Tb
Battery protection information: https://bit.ly/3Halypo
Power Tool Information: https://bit.ly/3XAimZC
Source-down PQFN information: http://www.infineon.com/source-down

Website: http://www.infineon.kr

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