[Webinar] Diagnosing system status and tuning gate resistance value with Infineon-SiC MOSFET evaluation board (2021.07.22, AM10:30~11:30)

However, if the system design is not optimized, not only will these benefits not be utilized, but the reliability of the system may also be reduced.

In this webinar, an actual SiC MOSFET evaluation board will be used to determine whether the selected device is appropriate.
We will introduce what tests are performed to confirm “whether the appropriate gate resistance value has been selected.”

We will introduce the tuning method, including the testing process and actual waveforms.

1. We introduce a test method to diagnose the status of a system using SiC MOSFETs as well as most semiconductor devices and to select an optimized gate resistance.
   This method, which Infineon calls the 'double pulse test', is a test method used by many companies as well as Infineon.
   Describes how to set up and perform a double pulse test.
   .
2. Using an evaluation board consisting of TO-247 3-Pin SiC MOSFET and 1ED3491 drive IC,
   We will introduce the process used to select the gate resistance while conducting an actual double pulse test.
   .
3. We introduce a method to measure Eon and Eoff in the current system from selected gate resistance.
   .
4. We introduce how to check whether the system's protection functions are working properly through a short circuit test.
   .
5. Lastly, we explain the strengths of Infineon's SiC MOSFETs and drive ICs compared to those of other companies, and introduce an evaluation board that can be useful.

Gate driver evaluation board consisting of EiceDRIVER™ and CoolSiC™ MOSFETs (EVAL-1EDC20H12AH-SIC)